Semiconductor equipment corporations Applied Materials announced two new manufacturing systems on the 14th to form the minute ...
The fun part about logic gates is that there are so many ways to make them, with each approach having its own advantages and disadvantages. Although these days transistor-transistor logic (TTL) is the ...
Samsung was the first fab to launch a 3nm process in mid-2022, beating TSMC to market by about six months. Plus, its 3nm node offers gate-all-around (GAA) transistors, which none of its rivals have ...
Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports scalable 3D semiconductor integration. (Nanowerk News) Researchers at the Daegu ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
This whitepaper gives a compact overview of the recommended gate drive concepts for both GIT (gate injection transistor) and SGT (Schottky gate transistor) product families. A versatile standard drive ...
IBM claims to have developed the world’s smallest working silicon transistor. At 6 nanometers in length (a nanometer, nm, is one-billionth of a meter), the new transistor is at least 10 times smaller ...
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