Spatial resolution of less than 10 nm has been identified as a requirement for accurate and quantitative two-dimensional dopant profiling by the International Technology Roadmap for Semiconductors ...

In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...

HC-MOS is a high-speed or high-density silicon gate CMOS with lower quiescent power consumption than equivalent LSTTL counterpart. This device consumes less power even when the complexity of the ...

IGBT, stands for Insulated Gate Bipolar Transistor. It is a bipolar transistor with an insulated gate terminal. It combines a control input with a MOS structure and a bipolar power transistor in a ...