Amorphous oxide semiconductors like IGZO (indium gallium zinc oxide) offer acceptable carrier mobility with very low leakage.
NAND flash prices have increased dramatically. Supply and demand are unlikely to ease this year as AI technology giants and large cloud service providers (CSPs) aggressively purchase high-capacity ...
And we're unlikely to see supply improve until 2027 at the earliest.
To make the most of open gate in post-processing, you need the best raw materials, so a high resolution of around 6K is ideal ...
NOR or NAND Flash? License AND! Arasan announces xSPI NOR AND eMMC NAND Combo PHY IP integrated seamlessly with its xSPI + eMMC Combo Controller IP ...
Neurophos is developing a massive optical systolic array clocked at 56GHz good for 470 petaFLOPS of FP4 compute As Moore's ...
Abstract: The sensitivity of vertical-channel 3-D NAND Flash memories to wide-energy spectrum neutrons is investigated as a function of cell depth in the pillars. Errors are found to be less numerous ...
Abstract: We report a framework for designing a ferroelectric gate stack for vertical NAND with efficient multi-bit performance by evaluating various gate stacks, including those with a tunnel ...
A new technical paper titled “Improving Contact Resistance in Top-Gate Carbon Nanotube Transistor through Self-Aligned MoOx ...
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