DATAQUEST

Chinese semiconductor research achieves multiple breakthroughs in memory and IC design

In one instance, to further enhance output voltage swing and linearity, the authors propose a novel “breakdown-voltage (BV) ...

Mouser Explores the Challenges of Powering AI in New Interactive Ebook From Renesas Electronics

Mouser Electronics has announced a new Interactive Ebook in collaboration with Renesas Electronics that explores how data ...
Semiconductor Engineering

300mm Fab-Compatible Integration Flow for Planar 2D FETs (imec, KU Leuven)

Imec and KU Leuven researchers published “Integration and electrical evaluation of WS2 and MoS2 fets in a 300 mm pilot line.” ...
Electronic Design

2025 PowerBest Winners: Power Conversion and Management

Higher levels of integration and ingenious power-conversion architectures are enabling simpler, denser, more efficient ...
IEEE

Room Temperature Negative Differential Resistance in Gate-All-Around Field-Effect Transistors With 1D Active Channels

Abstract: We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel.
IEEE

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors

Abstract: This work explores the low-temperature performance of a field-effect transistor with a carbon nanotube as the active channel. The device topology is an ideal cylindrical gate-all-around with ...