Spatial resolution of less than 10 nm has been identified as a requirement for accurate and quantitative two-dimensional dopant profiling by the International Technology Roadmap for Semiconductors ...
In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
HC-MOS is a high-speed or high-density silicon gate CMOS with lower quiescent power consumption than equivalent LSTTL counterpart. This device consumes less power even when the complexity of the ...
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