Materials innovation drives next-gen AI chips, enabling performance, efficiency and scalability.
Abstract: This article analyzes the capacitance-voltage characteristics of SiC MOSFETs under a measurement configuration where an ac signal is applied to the Gate and a dc bias is imposed on the drain ...
Abstract: We propose here a flexible physics-based model to calculate the capacitance and conductance in MIM and MOS capacitors, accounting for traps with different energy and space distributions in ...
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