Abstract: We report on the presence of a Negative Differential Resistance (NDR) in a Gate-All-Around Field Effect Transistor (GAAFET) with 1D nanowires or nanotubes as the active conducting channel.
The technique, known as thermal rectification, could extend battery life in cell phones, electric vehicles, satellites, and even improve AI data center efficiency. The innovation works like a diode ...
Discover the top 3 undervalued Semiconductors & Semiconductor Equipment stocks for Friday, January 30 based on AAII’s Stock ...
And while the technology sounds impressive now, it seems to be at the limits of what current laboratory photolithography can provide. At present, a 1 mm fibre chip can potentially integrate tens of ...
The Einstein–de Haas effect, which links the spin of electrons to macroscopic rotation, has now been demonstrated in a ...
From computers to smartphones, from smart appliances to the internet itself, the technology we use every day only exists ...
Although not among the most advanced technologies, 28-nanometer chips still play a fundamental role due to their stability, ...
Abstract: Organic field-effect transistors (OFETs) that are intrinsically flexible are desirable components for wearable electronics. A major challenge for these electronics is electrostatic discharge ...
Forbes contributors publish independent expert analyses and insights. Covering Digital Storage Technology & Market. IEEE President in 2024 This last week I had my last two public appearances as the ...
The IEEE International Electron Devices Meeting (IEDM) is considered the premier forum where scientists and engineers come together to disclose, discuss and debate the best recent R&D work in electron ...
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