Infineon Technologies has launched its first isolated gate driver integrated circuits (ICs) with opto‑emulator inputs, aimed ...
EPC’s first Gen 7 eGaN power transistor, the 40-V EPC2366, delivers up to 3× better performance than equivalent silicon ...
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ASUS ROG Z590 round-up analysis
Today Luke checks out three new asus motherboards: the asus rog strix Z590-E Gaming WiFi, asus rog strix Z590-I Gaming WiFi, ...
GaN-, and silicon-based power transistors, modules, and other basic building blocks for more robust, efficient, and ...
Higher levels of integration and ingenious power-conversion architectures are enabling simpler, denser, more efficient ...
Alpha and Omega Semiconductor unveils 600V Super Junction MOSFET platform, expanding its high‑voltage power portfolio.
RIR Power Electronics today announced the launch of its Silicon Carbide Merged-PiN Schottky diodes, marking a significant advancement in power device technology for next-generation electric vehicles, ...
Think of an application for SiC power electronics and you’ll probably think of electric vehicles (EVs). After all, it’s the battery-powered automobile that’s driving the growth in sales of SiC MOSFETs ...
MALVERN, PA — Vishay Intertechnology, Inc. (NYSE: VSH) on Monday unveiled five new 1200-volt silicon carbide power modules ...
Combining efficiency with ruggedness, RIR Power Electronics’ MPS technology enables designers to achieve higher performance without compromising reliability.
The seven low-side or high-side drive topology parts are: MCP14LH2101, MCP14LH2106, MCP14LH21064, MCP14LH2190, MCP14LH21904, MCP14LH2181, and MCP14LH21814.
The VS-SFxxA120 series 1200 V SiC MOSFET power modules from Vishay Intertechnology are silicon carbide devices packaged in an ...
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